© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 4

1

Publication Order Number:

NTD50N03R/D

NTD50N03R

Power MOSFET

25 V, 45 A, Single N−Channel, DPAK

Features

Applications

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

25

V

Gate−to−Source Voltage

"20

V

Continuous Drain

(Note 1)

Steady

State

9.2

A

7.2

Power Dissipation

2.1

W

Continuous Drain

(Note 2)

7.8

A

6.0

Power Dissipation

1.5

W

Continuous Drain

(Note 1)

45

A

35

Power Dissipation

50

W

Pulsed Drain Current

180

A

Current Limited by

Package

45

A

Operating Junction and Storage

Temperature

−55 to

175

°C

Source Current (Body Diode)

45

A

Drain−to−Source (dv/dt)

dv/dt

8.0

V/ns

Single Pulse Drain−to−Source Avalanche

20

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

CASE 369AA

DPAK

(Surface Mount)

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Y

= Year

WW

= Work Week

T50N03R

= Device Code

G

= Pb−Free Package

3

Source

2

Drain

4

Drain

1

Gate

3

Source

2

Drain

4

Drain

CASE 369D

DPAK

(Straight Lead)

STYLE 2

1

Gate

25 V

12.5 m

W @ 10 V

45 A

http://onsemi.com

19 m

W @ 4.5 V

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

D

S

G

N−Channel

1

2

3

4

CASE 369AC

3 IPAK

(Straight Lead)

1

2

3

4

1 2

3

4