NSS12500UW3T2G_07 datasheet(1/5 Pages) ONSEMI

Part #	NSS12500UW3T2G

Description	12 V, 8.0 A, Low VCE(sat) PNP Transistor

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

1 / 5 page

March, 2007 − Rev. 1

1

Publication Order Number:

NSS12500UW3/D

NSS12500UW3T2G

12 V, 8.0 A, Low VCE(sat)

PNP Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

• This is a Pb−Free Device

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

−12

Vdc

Collector-Base Voltage

VCBO

−12

Vdc

Emitter-Base Voltage

VEBO

−7.0

Vdc

Collector Current − Continuous

IC

−5.0

Adc

Collector Current − Peak

ICM

−8.0

A

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation, TA = 25°C

Derate above 25°C

PD (Note 1)

875

7.0

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 1)

143

°C/W

Total Device Dissipation, TA = 25°C

Derate above 25°C

PD (Note 2)

1.5

11.8

W

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 2)

85

°C/W

Thermal Resistance,

Junction−to−Lead #3

RqJL (Note 2)

23

°C/W

Total Device Dissipation

(Single Pulse < 10 sec)

PDsingle

(Notes 2 & 3)

3.0

W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 100 mm2, 1 oz copper traces.

2. FR−4 @ 500 mm2, 1 oz copper traces.

3. Thermal response.

http://onsemi.com

Device

Package

Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

WDFN3

CASE 506AU

NSS12500UW3T2G

WDFN3

(Pb−Free)

3000/

Tape & Reel

12 VOLTS

8.0 AMPS

PNP LOW VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 55 mW

1

VE = Specific Device Code

M

= Date Code

G

= Pb−Free Package

VE M

G

1

MARKING DIAGRAM

2

3

COLLECTOR

3

1

BASE

2

EMITTER

Similar Part No. - NSS12500UW3T2G_07

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NSS12500UW3T2G	60Kb / 5P	12 V, 8.0 A, Low VCE(sat) PNP Transistor July, 2006 ??Rev. 0
ON Semiconductor	NSS12500UW3T2G	1Mb / 20P	High Efficiency DC-DC Converters Rev.2, Jun-2006

More results

Similar Description - NSS12500UW3T2G_07

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NSS12500UW3T2G	60Kb / 5P	12 V, 8.0 A, Low VCE(sat) PNP Transistor July, 2006 ??Rev. 0
	NSS12601CF8T1G	88Kb / 6P	12 V, 8.0 A, Low VCE(sat) NPN Transistor May, 2007 - Rev. 1
	NSS12200LT1G	132Kb / 5P	12 V, 4.0 A, Low VCE(sat) PNP Transistor August, 2009 ??Rev. 3
	NSS12200WT1G	134Kb / 5P	12 V, 3 A, Low VCE(sat) PNP Transistor October, 2009 ??Rev. 1
	NSS12100M3T5G	87Kb / 5P	12 V, 1 A, Low VCE(sat) PNP Transistor September, 2007 - Rev. 0
	NSS12600CF8T1G	106Kb / 5P	12 V, 6.0 A, Low VCE(sat) PNP Transistor March, 2007 ??Rev. 1
	NSS12600CF8T1G	102Kb / 5P	12 V, 6.0 A, Low VCE(sat) PNP Transistor September, 2006 ??Rev. 0
	NSS12200WT1G	63Kb / 6P	12 V, 3 A, Low VCE(sat) PNP Transistor June, 2005 ??Rev. 0
	NSS12100XV6T1G	100Kb / 5P	12 V, 1 A, Low VCE(sat) PNP Transistor November, 2006 ??Rev. 0
	NSS12200LT1G	102Kb / 5P	12 V, 4.0 A, Low VCE(sat) PNP Transistor September, 2006 ??Rev. 0

More results

NSS12500UW3T2G Datasheet(PDF) 1 Page - ON Semiconductor

NSS12500UW3T2G Datasheet(HTML) 1 Page - ON Semiconductor

Similar Part No. - NSS12500UW3T2G_07

Similar Description - NSS12500UW3T2G_07

Html Pages

1 2 3 4 5

Datasheet Download

Link URL