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PEMZ7 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. PEMZ7
Description  NPN/PNP general purpose transistors
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PEMZ7 Datasheet(HTML) 4 Page - NXP Semiconductors

 
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2001 Nov 07
4
Philips Semiconductors
Product specification
NPN/PNP general purpose transistors
PEMZ7
CHARACTERISTICS
Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 15 V; IE =0
−−
100
nA
VCB = 15 V; IE = 0; Tj = 150 °C
−−
50
µA
IEBO
emitter-base cut-off current
VEB =5V; IC =0
−−
100
nA
hFE
DC current gain
VCE =2V; IC =10mA
200
−−
VCEsat
collector-emitter saturation
voltage
IC = 200 mA; IB =10mA
−−
220
mV
fT
transition frequency
IC = 100 mA; VCE =5V;
f = 100 MHz
TR1 (NPN)
250
420
MHz
TR2 (PNP)
100
280
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
TR1 (NPN)
4.4
6
pF
TR2 (PNP)
−−
10
pF
handbook, halfpage
0
400
600
200
100
300
500
MHC014
10−1
110
IC (mA)
hFE
102
103
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
TR1 (NPN); VCE =2V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0
(1)
(2)
(3)
(4)
(6)
(8)
IC
(mA)
VCE (V)
1200
800
400
0
210
46
8
MLD672
(9)
(10)
(7)
(5)
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
TR1 (NPN); Tamb =25 °C.
(1) IB = 4.60 mA
(2) IB = 4.14 mA
(3) IB = 3.68 mA
(4) IB = 3.22 mA
(5) IB = 2.76 mA
(6) IB = 2.30 mA
(7) IB = 1.84 mA
(8) IB = 1.38 mA
(9) IB = 0.92 mA
(10) IB = 0.46 mA


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