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PDTC144EK Datasheet(PDF) 3 Page - NXP Semiconductors |
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PDTC144EK Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1998 May 19 3 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC144EK LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage positive − +40 V negative −−10 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =50V −− 100 nA ICEO collector cut-off current IB = 0; VCE =30V −− 1 µA IB = 0; VCE =30V; Tj = 150 °C −− 50 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 90 µA hFE DC current gain IC = 5 mA; VCE =5V 80 −− VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA −− 150 mV Vi(off) input-off voltage IC = 100 µA; VCE =5V − 1.2 0.8 V Vi(on) input-on voltage IC = 2 mA; VCE = 300 mV 3 1.6 − V R1 input resistor 33 47 61 k Ω resistor ratio 0.8 1 1.2 Cc collector capacitance IE =ie = 0; VCB =10V; f=1MHz −− 2.5 pF R2 R1 -------- |
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