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MGFC39V4450A Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. MGFC39V4450A
Description  4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MGFC39V4450A Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V4450A
4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
DESCRIPTION
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 8W (TYP.) @ f=4.4~5.0GHz
High power gain
GLP = 11.5 dB (TYP.) @ f=4.4~5.0GHz
High power added efficiency
P.A.E. = 30 % (TYP.) @ f=4.4~5.0GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.
APPLICATION
item 01 : 4.4~5.0 GHz band power amplifier
item 51 : 4.4~5.0 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID=2.4 (A)
Refer to Bias Procedure"
RG= 50 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg.C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
7.5
A
IGR
Reverse gate current
-20
mA
IGF
Forward gate current
42
mA
PT
Total power dissipation *1
42.8
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25 deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25 deg.C)
Limits
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V, VGS=0V
-
-
7.5
A
gm
Transconductance
VDS=3V, ID=2.2A
-
2
-
S
VGS(off)
Gate to source cut-off voltage
VDS=3V, ID=20mA
-
-
-4.5
V
P1dB
Output power at 1dB gain compression
38
39
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=2.4A, f=4.4~5.0GHz
8
11.5
-
dB
ID
Drain current
-
-
3
A
P.A.E.
Power added efficiency
-
30
-
%
IM3
3rd order IM distortion
*1
-42
-45
-
dBc
Rth(ch-c)
Thermal resistance
*2
Delta Vf method
-
-
3.5
deg.C/W
*1 : item -51, 2 tone test, Po=28dBm Single Carrier Level, f=5GHz, Delta f=10MHz
*2 : Channel to case
MITSUBISHI
June/2004
ELECTRIC
The MGFC39V4450A is an internally impedance-matched
GaAs power FET especially designed for use in 4.4 ~ 5.0
GHz band amplifiers.The hermetically sealed metal-
ceramic package guarantees high reliability.
Parameter
Test conditions
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to
safety when making your circuit designs, with appropriate
measures such as (1)placement of substitutive, auxiliary
circuits, (2)use of non-flammable material or (3)prevention
against any malfunction or mishap.
Symbol
Unit
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
GF-8
(2)
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
R-1.6
(3)
(2)
0.6 +/-0.15
Unit : millimeters


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