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MPX5050 Datasheet(PDF) 4 Page - Freescale Semiconductor, Inc

Part No. MPX5050
Description  Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MPX5050 Datasheet(HTML) 4 Page - Freescale Semiconductor, Inc

 
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MPX5050
Sensors
4
Freescale Semiconductor
Figure 3 illustrates the Differential/Gauge Sensing Chip in
the basic chip carrier (Case 867). A fluorosilicone gel isolates
the die surface and wire bonds from the environment, while
allowing the pressure signal to be transmitted to the sensor
diaphragm.
The MPX5050/MPXV5050G series pressure sensor
operating characteristics, and internal reliability and
qualification tests are based on use of dry air as the pressure
media. Media, other than dry air, may have adverse effects on
sensor performance and long-term reliability. Contact the
factory for information regarding media compatibility in your
application.
Figure 2 shows the sensor output signal relative to
pressure input. Typical, minimum, and maximum output
curves are shown for operation over a temperature range of
0× to 85×C using the decoupling circuit shown in Figure 4.
The output will saturate outside of the specified pressure
range.
Figure 4 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input
of a microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Figure 2. Output versus Pressure Differential
Figure 3. Cross-Sectional Diagram
(not to scale)
Figure 4. Recommended Power Supply Decoupling
and Output Filtering
(For additional output filtering, please refer to
Application Note AN1646.)
Table 3. Mechanical Characteristics
Characteristics
Typ
Unit
Weight, Basic Element (Case 867)
1.8
grams
Weight, Basic Element (Case 1369)
3.376
grams
Weight, Basic Element (Case 482A)
grams
Differential Pressure (kPa)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
25
30
35
40
45
55
50
Transfer Function:
Vout = VS*(0.018*P+0.04) ± ERROR
VS = 5.0 Vdc
TEMP = 0 to 85°C
TYPICAL
MIN
MAX
+5 V
1.0 μF
0.01 μF
470 pF
GND
Vs
Vout
IPS
OUTPUT
Fluoro Silicone
Gel Die Coat
Wire Bond
Die
P1
Stainless Steel
Metal Cover
Lead Frame
Die
Bond
Epoxy
Plastic
Case
P2
Differential/Gauge Element


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