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GL9575
Page: 1/4
ISSUED DATE :2005/02/18
REVISED DATE :
G
G L
L 99557755
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GL9575 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage application such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
6.70
7.30
B
13 C
TYP.
C
2.90
3.10
J
2.30 REF.
D
0.02
0.10
1
6.30
6.70
E
0 C
10 C
2
6.30
6.70
I
0.60
0.80
3
3.30
3.70
H
0.25
0.35
4
3.30
3.70
5
1.40
1.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
f 25
V
Continuous Drain Current3
ID @TA=25 :
-4.0
A
Continuous Drain Current3
ID @TA=70 :
-3.2
A
Pulsed Drain Current1
IDM
-20
A
Total Power Dissipation
PD @TA=25 :
3
W
Linear Derating Factor
0.02
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-a
45
/W
BVDSS
-60V
RDS(ON)
90m
ID
-4A
Pb Free Plating Product
SOT-223
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