PDTC114TT datasheet(3/8 Pages) PHILIPS

Part #	PDTC114TT

Description	NPN resistor-equipped transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

1999 Apr 16

3

Philips Semiconductors

Objective speciﬁcation

NPN resistor-equipped transistor

PDTC114TT

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =50V

−−

100

nA

ICEO

collector cut-off current

IB = 0; VCE =30V

−−

1

µA

IB = 0; VCE = 30 V; Tj = 150 °C

−−

50

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

nA

hFE

DC current gain

IC = 1 mA; VCE = 5 V

200

−−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−−

150

mV

R1

input resistor

7

10

13

k

Ω

Cc

collector capacitance

IE =ie = 0; VCB =10V;

f = 1 MHz

−−

2.5

pF

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

600

0

10−1

110

102

MGM902

IC (mA)

hFE

(1)

(2)

(3)

200

400

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

10−1

MGM901

10−2

VCEsat

(V)

(2)

(3)

(1)

10−1

110

102

IC (mA)

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