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PDTC114TT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PDTC114TT Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 16 3 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC114TT THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =50V −− 100 nA ICEO collector cut-off current IB = 0; VCE =30V −− 1 µA IB = 0; VCE = 30 V; Tj = 150 °C −− 50 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 100 nA hFE DC current gain IC = 1 mA; VCE = 5 V 200 −− VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA −− 150 mV R1 input resistor 7 10 13 k Ω Cc collector capacitance IE =ie = 0; VCB =10V; f = 1 MHz −− 2.5 pF Fig.3 DC current gain as a function of collector current; typical values. VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 600 0 10−1 110 102 MGM902 IC (mA) hFE (1) (2) (3) 200 400 Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 10−1 MGM901 10−2 VCEsat (V) (2) (3) (1) 10−1 110 102 IC (mA) |
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