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GCU15CA-130 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. GCU15CA-130
Description  MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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GCU15CA-130 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Mar. 2004
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state
voltage
Turn-on time
Turn-on delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
3000
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
Eon
ts
Eoff
QRR
Erec
IGT
VGT
Unit
Symbol
VRRM
VRSM
VDRM
VDSM
V(LTDS)
Parameter
V
V
V
V
V
Voltage class
6500
6500
6500
6500
3600
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU15CA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
GCT PART
MAXIMUM RATINGS
Conditions
Gate driver energized
Gate driver energized
Gate driver energized,
λ = 100 Fit
8
2.7
× 105
1000
9
32
180
230
10
21
900
1500
Applied for all condition angles
f = 60Hz, sinewave
θ = 180°, Tf = 66°C
VDM = 3/4 VDRM, VD = 3000V, LC = 0.3
µH
Tj = 25/125
°C
(See Fig. 1, 3)
VD = 3000V, IT = 1500A, CS = 0.2
µF, RS = 5Ω
Tj = 25/125
°C, f = 60Hz
(See Fig. 1, 2)
IT = 1500A, VR = 3000V, Tj = 25/125
°C
CS = 0.2
µF, RS = 5Ω
(See Fig. 4, 5)
One half cycle at 60Hz, Tj = 125
°C start
Ratings
780
500
A
A
kA
A2s
A/
µs
kW
kW
W
W
V
V
A
A
Surge on-state current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
IT(RMS)
IT(AV)
ITSM
I2t
diR/dt
PFGM
PRGM
PFG(AV)
PRG(AV)
VFGM
VRGM
IFGM
IRGM
Symbol
Parameter
RMS on-state current
Average on-state current
Conditions
ITQRM
Repetitive controllable
on-state current
1500
Unit
A
diT/dt
Critical rate of rise of on-state
current
1000
A/
µs
V
mA
mA
mA
V/
µs
µs
µs
J/P
µs
J/P
µC
J/P
A
V
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Limits
Min
Typ
Max
Unit
6
300
150
100
5
1
1.3
3
5.2
2000
7.4
0.75
1.5
IT = 800A, Tj = 125
°C
VRM = 6500V, Tj = 125
°C
VDM = 6500V, Tj = 125
°C, Gata driver energized
VRG = 21V, Tj = 125
°C
VD = 3000V, Tj = 125
°C
Gate driver energized
(Expo. wave)
IT = 1500A, VD = 3000V, di/dt = 1000A/
µs, Tj = 125°C
CS = 0.2
µF, RS = 5Ω
(See Fig. 1, 2)
IT = 800A, VD = 3000V, di/dt = 1000A/
µs
CS = 0.2
µF, RS = 5Ω, Tj = 125°C
(See Fig. 1, 2)
IT = 1500A, VDM = 3/4 VDRM, VD = 3000V
CS = 0.2
µF, RS = 5Ω, Tj = 125°C
(See Fig. 1, 5)
IT = 800A, VDM = 4000V, VD = 3000V
CS = 0.2
µF, RS = 5Ω, Tj = 125°C
(See Fig. 1, 5)
VR = 3000V, IT = 800A, di/dt = 1000A/
µs
CS = 0.2
µF, RS = 5Ω, Tj = 125°C
(See Fig. 4, 5)
VD = 24V, RL = 0.1
Ω, Tj = 25°C
DC method


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