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PDTA143 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PDTA143 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 20 3 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE THERMAL CHARACTERISTICS Note 1. Refer to SC-75 (SOT416) standard mounting conditions. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 833 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −50 V −−−100 nA ICEO collector cut-off current IB = 0; VCE = −30 V −−−1 µA IB = 0; VCE = −30 V; Tj = 150 °C −−−50 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−−0.6 mA hFE DC current gain IC = −10 mA; VCE = −5V 50 −− VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−−150 mV Vi(off) input-off voltage IC = −100 µA; VCE = −5V −−−0.3 V Vi(on) input-on voltage IC = −20 mA; VCE = −0.3 V −2.5 −− V R1 input resistor 3.3 4.7 6.1 k Ω resistor ratio 1.7 2.1 2.6 Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz −− 3pF R2 R1 -------- |
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