PDTA143 datasheet(3/8 Pages) PHILIPS

Part #	PDTA143

Description	PNP resistor-equipped transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

1999 Apr 20

3

Philips Semiconductors

Product speciﬁcation

PNP resistor-equipped transistor

PDTA143XE

THERMAL CHARACTERISTICS

Note

1. Refer to SC-75 (SOT416) standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

833

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −50 V

−−−100

nA

ICEO

collector cut-off current

IB = 0; VCE = −30 V

−−−1

µA

IB = 0; VCE = −30 V; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−0.6

mA

hFE

DC current gain

IC = −10 mA; VCE = −5V

50

−−

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−−−150

mV

Vi(off)

input-off voltage

IC = −100 µA; VCE = −5V

−−−0.3

V

Vi(on)

input-on voltage

IC = −20 mA; VCE = −0.3 V

−2.5

−−

V

R1

input resistor

3.3

4.7

6.1

k

Ω

resistor ratio

1.7

2.1

2.6

Cc

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−−

3pF

R2

R1

--------

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