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FM600TU-3A Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. FM600TU-3A
Description  HIGH POWER SWITCHING USE INSULATED PACKAGE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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FM600TU-3A Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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May 2006
150
±20
300
600
300
300
600
960
1300
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
MITSUBISHI <MOSFET MODULE>
FM600TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
V
V
A
A
A
A
A
W
W
°C
°C
V
N • m
N • m
g
*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.
*3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2)
R1: Resistance at T1(K), R2: Resistance at T2(K)
*7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
G-S Short
D-S Short
TC’ = 114°C*3
Pulse*2
L = 10µH Pulse*2
Pulse*2
TC = 25°C
TC’ = 25°C*3
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting M6
Typical value
Unit
Ratings
VDSS
VGSS
ID
IDM
IDA
IS*1
ISM*1
PD*4
PD*4
Tch
Tstg
Viso
ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)
ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)
Conditions
Item
Symbol
Min.
4.7
mA
V
µA
mΩ
V
mΩ
nF
nC
ns
ns
µC
V
°C/W
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
Lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
VDS = VDSS, VGS = 0V
ID = 30mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 300A
VGS = 15V
ID = 300A
VGS = 15V
ID = 300A
terminal-chip
VDS = 10V
VGS = 0V
VDD = 80V, ID = 300A, VGS = 15V
VDD = 80V, ID = 300A, VGS1 = VGS2 = 15V
RG = 4.2Ω, Inductive load switching operation
IS = 300A
IS = 300A, VGS = 0V
MOSFET part (1/6 module)*7
MOSFET part (1/6 module)*3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*3, *8 (1/6 module)
Unit
Limits
IDSS
VGS(th)
IGSS
rDS(ON)
(chip)
VDS(ON)
(chip)
R(lead)
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr*1
Qrr*1
VSD*1
Rth(ch-c)
Rth(ch-c’)
Rth(c-f)
Rth(c’-f’)
Conditions
Item
Symbol
Typ.
6
1.6
3.0
0.48
0.91
0.7
1.0
1950
8.0
0.1
0.09
Max.
1
7.3
1.5
2.2
0.66
110
15
10
400
400
500
400
200
1.3
0.13
0.096
Tch = 25°C
Tch = 125°C
Tch = 25°C
Tch = 125°C
Tch = 25°C
Tch = 125°C
THERMISTOR PART
Min.
Unit
Limits
Conditions
Parameter
Symbol
Typ.
100
4000
Max.
kΩ
K
Resistance
B Constant
TTH = 25°C*5
Resistance at TTH = 25°C, 50°C*5
RTH*6
B*6


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