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STW13NK100Z Datasheet(PDF) 6 Page - STMicroelectronics |
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STW13NK100Z Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 14 page Electrical characteristics STW13NK100Z 6/14 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 13 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 52 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=8.3A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=13 A, di/dt = 100A/µs, VDD=100 V, Tj=25°C (see Figure 18) 820 12.7 31 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=13 A, di/dt = 100A/µs, VDD=100V, Tj=150°C (see Figure 18) 1050 17.8 34 ns µC A |
Similar Part No. - STW13NK100Z_06 |
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Similar Description - STW13NK100Z_06 |
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