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STW13NK100Z Datasheet(PDF) 6 Page - STMicroelectronics

Part # STW13NK100Z
Description  N-channel 1000V - 0.56??- 13A - TO-247 Zener - Protected SuperMESH??PowerMOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW13NK100Z Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STW13NK100Z
6/14
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
13
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
52
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=8.3A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=13 A,
di/dt = 100A/µs,
VDD=100 V, Tj=25°C
(see Figure 18)
820
12.7
31
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=13 A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
(see Figure 18)
1050
17.8
34
ns
µC
A


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