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BSR31 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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BSR31 Datasheet(HTML) 1 Page - Zetex Semiconductors |
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SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – BSR31 – BSR41 BSR33 – BSR43 PARTMARKING DETAILS – BSR31 – BR2 BSR33 – BR4 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSR31 BSR33 UNIT Collector-Base Voltage VCBO -70 -90 V Collector-Emitter Voltage VCEO -60 -80 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power Dissipation at Tamb=25°C PTOT 1W Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base BSR31 Breakdown Voltage BSR33 V(BR)CBO -70 -90 V V IC=-100µA IC=-100µA Collector-Emitter BSR31 Breakdown Voltage BSR33 V(BR)CEO -60 -80 VIC=-10mA IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10mA Collector Cut-Off Current ICBO -100 -50 nA µA VCB=-60V VCB=-60V, Tamb=125°C Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.5 V V IC =-150mA, IB=-15mA* IC =-500mA, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 -1.2 V V IC=-150mA, IB=-15mA* IC =-500mA, IB=-50mA* Static Forward Current Transfer Ratio hFE 30 100 50 300 IC =-100µA, VCE=-5V* IC =-100mA, VCE =-5V* IC =-500mA, VCE =-5V* Collector Capacitance Cc 20 pF VCB =-10V, f =1MHz Emitter Capacitance Ce 120 pF VEB =-0.5V, f =1MHz Transition Frequency fT 100 MHz IC=-50mA, VCE=-10V f =35MHz Turn-On Time Ton 500 ns VCC =-20V, IC =-100mA IB1 =-IB2 =-5mA Turn-Off Time Toff 650 ns *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤2% Spice parameter data is available upon request for this device BSR31 BSR33 C C B E SOT89 3 - 66 |
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