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BSR31 Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. BSR31
Description  SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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BSR31 Datasheet(HTML) 1 Page - Zetex Semiconductors

  BSR31 Datasheet HTML 1Page - Zetex Semiconductors  
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SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPE –
BSR31 – BSR41
BSR33 – BSR43
PARTMARKING DETAILS –
BSR31 – BR2
BSR33 – BR4
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BSR31
BSR33
UNIT
Collector-Base Voltage
VCBO
-70
-90
V
Collector-Emitter Voltage
VCEO
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
PTOT
1W
Operating and Storage Temperature Range
Tj:Tstg
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
BSR31
Breakdown Voltage BSR33
V(BR)CBO
-70
-90
V
V
IC=-100µA
IC=-100µA
Collector-Emitter
BSR31
Breakdown Voltage BSR33
V(BR)CEO
-60
-80
VIC=-10mA
IC=-10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-10mA
Collector Cut-Off Current
ICBO
-100
-50
nA
µA
VCB=-60V
VCB=-60V, Tamb=125°C
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.25
-0.5
V
V
IC =-150mA, IB=-15mA*
IC =-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0
-1.2
V
V
IC=-150mA, IB=-15mA*
IC =-500mA, IB=-50mA*
Static Forward Current
Transfer Ratio
hFE
30
100
50
300
IC =-100µA, VCE=-5V*
IC =-100mA, VCE =-5V*
IC =-500mA, VCE =-5V*
Collector Capacitance
Cc
20
pF
VCB =-10V, f =1MHz
Emitter Capacitance
Ce
120
pF
VEB =-0.5V, f =1MHz
Transition Frequency
fT
100
MHz
IC=-50mA, VCE=-10V
f =35MHz
Turn-On Time
Ton
500
ns
VCC =-20V, IC =-100mA
IB1 =-IB2 =-5mA
Turn-Off Time
Toff
650
ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
BSR31
BSR33
C
C
B
E
SOT89
3 - 66


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