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BUL741 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. BUL741
Description  High voltage fast-switching NPN Power Transistor
Download  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL741 Datasheet(HTML) 3 Page - STMicroelectronics

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BUL741
Electrical characteristics
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2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =0V)
VCE =1050V
0.2
10
µA
ICEO
Collector cut-off current
(IB =0)
VCE =400V
10
250
µA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE =1mA
15
19
24
V
VCEO(sus) (1)
Collector-emitter
sustaining voltage
(IB = 0)
IC =10mA
400
450
V
VCE(sat) (1) Collector-emitter
saturation voltage
IC =0.7A
IB =0.14A
IC =2A
IB =0.6A
0.15
0.5
0.5
1.5
V
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC =2A
IB =0.6A
1.1
1.5
V
hFE
DC current gain
IC =0.1A
VCE =5V
IC =0.45A
VCE =3V
48
25
70
35
100
50
ts
tf
Resistive load
Storage time
Fall time
VCC =125V
IC =1A
IB1 = -IB2 =0.2A tp = 300µs
VBE(off) =-5V
2.5
350
3.5
500
µs
ns
Ear
Repetitive avalanche
energy
L =2mH
C =1.8nF
VBE(off) =-5V
5mJ


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