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IRFB13N50APBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFB13N50APBF
Description  SMPS MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFB13N50APBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRFB13N50APbF
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– –––
1.5
V
TJ = 25°C, IS = 14A, VGS = 0V
„
trr
Reverse Recovery Time
––– 370
550
ns
TJ = 125°C, IF = 14A
Qrr
Reverse RecoveryCharge
–––
4.4
6.5
µC
di/dt = 100A/µs
„
iRRM
Reverse RecoveryCurrent
–––
21
31
A
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
8.1
––– –––
S
VDS = 50V, ID = 8.4A
Qg
Total Gate Charge
–––
–––
81
ID = 14A
Qgs
Gate-to-Source Charge
–––
–––
20
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
36
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
15
–––
VDD = 250V
tr
Rise Time
–––
39
–––
ID = 14A
td(off)
Turn-Off Delay Time
–––
39
–––
RG = 7.5Ω
tf
Fall Time
–––
31
–––
VGS = 10V,See Fig. 10
„
Ciss
Input Capacitance
–––
1910 –––
VGS = 0V
Coss
Output Capacitance
–––
290 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
11
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
2730 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
82
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
160 –––
VGS = 0V, VDS = 0V to 400V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
S
D
G
Diode Characteristics
14
56
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.55 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.450
VGS = 10V, ID = 8.4A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 500V, VGS = 0V
–––
––– 250
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ƒ ISD ≤ 14A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Notes:
‚ Starting TJ = 25°C, L = 5.7mH, RG = 25Ω,
IAS = 14A, dv/dt = 7.6V/ns. (See Figure 12a)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.


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