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NLAS4501 Datasheet(PDF) 4 Page - ON Semiconductor |
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NLAS4501 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 10 page NLAS4501 http://onsemi.com 4 ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) VCC Limit Symbol Parameter Condition VCC V 25°C Unit BW Maximum On−Channel −3dB Bandwidth or VIS = 0 dBm 3.0 190 MHz BW Maximum On Channel 3dB Bandwidth or Minimum Frequency Response VIS 0 dBm VIS centered between VCC and GND (Fi 6 d 14) 3.0 4.5 190 200 220 MHz IS CC (Figures 6 and 14) 5.5 220 VONL Maximum Feedthrough On Loss VIS = 0 dBm @ 10 kHz 3.0 −2 dB VONL Maximum Feedthrough On Loss VIS 0 dBm @ 10 kHz VIS centered between VCC and GND (Fi 6) 3.0 4.5 2 −2 2 dB IS CC (Figure 6) 5.5 −2 VISO Off−Channel Isolation f = 100 kHz; VIS = 1 V RMS 3.0 −93 dB VISO Off Channel Isolation f 100 kHz; VIS 1 V RMS VIS centered between VCC and GND (Fi 6 d 15) 3.0 4.5 93 dB IS CC (Figures 6 and 15) 5.5 Q Charge Injection VIS = VCC to GND, FIS = 20 kHz 3.0 1.5 Q Charge Injection Enable Input to Common I/O VIS = VCC to GND, FIS = 20 kHz tr = tf = 3 ns 3.0 5.5 1.5 3.0 pC Enable Input to Common I/O tr = tf = 3 ns RIS = 0 W, CL = 1000 pF 5.5 3.0 pC RIS = 0 W, CL = 1000 pF Q = CL * DVOUT Q = CL DVOUT (Figures 7 and 16) THD Total Harmonic Distortion FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 pF 3.3 0.3 % THD Total Harmonic Distortion THD + Noise FIS 20 Hz to 1 MHz, RL Rgen 600 W, CL 50 pF VIS = 3.0 VPP sine wave 3.3 5.5 0.3 0.15 % IS PP VIS = 5.0 VPP sine wave IS PP (Figure 17) −55 1.00E+03 5 1.00E−01 −15 −35 1.00E−04 Figure 3. Switch Leakage vs. Temperature 1.00E+05 INO(OFF) TEMPERATURE (°C) 1.00E−03 1.00E−02 1.00E+00 1.00E+02 1.00E+04 25 45 1.00E−05 1.00E−06 1.00E−07 1.00E+01 65 85 105 125 145 ICOM(ON) ICOM(OFF) |
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