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ZXBM2001 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXBM2001 Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 10 page ZXBM2001 ZXBM2002 ZXBM2003 SEMICO NDUC TORS ISSUE 4 - OCTOBER 2004 2 Parameter Symbol Limits Unit Supply Voltage VCCmax -0.6 to 20 V Input Current ICCmax 200 mA Power Dissipation 25°C PDmax 500 mW Operating Temp. TOPR -40 to 85 C Storage Temp. TSTG -55 to 150 C Absolute maximum ratings Power Dissipation 1) Maximum allowable Power Dissipation, PD, is shown plotted against Ambient Temperature, TA, in the accompanying Power Derating Curve, indicating the Safe Operating Area for the device. 2) Power consumed by the device, PT, can be calculated from the equation: PT = PQ + PPh where PQ is power dissipated under quiescent current conditions, given by: PQ = VCC x ICC where VCC is the application device Supply Voltage and ICC is the maximum Supply Current given in the Electrical Characteristics and PPh is power generated due to either one of the phase outputs Ph1 or Ph2 being active, given by: PPh = IOL x VOL where IOL is the application Ph1 and Ph2 output currents and VOL is the maximum Low Level Output Voltage for the Ph1 and Ph2 outputs given in the Electrical Characteristics |
Similar Part No. - ZXBM2001_04 |
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Similar Description - ZXBM2001_04 |
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