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QEB363 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. QEB363
Description  Subminiature Plastic Infrared Emitting Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

QEB363 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
QEB363 Rev. 1.0.0
2
Absolute Maximum Ratings (T
A = 25°C unless otherwise specified)
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics (T
A = 25°C)
Symbol
Parameter
Rating
Unit
TOPR
Operating Temperature
-40 to +100
°C
TSTG
Storage Temperature
-40 to +100
°C
TSOL-I
Soldering Temperature (Iron)(2,3,4)
240 for 5 sec
°C
TSOL-F
Soldering Temperature (Flow)(2,3)
260 for 10 sec
°C
IF
Continuous Forward Current
50
mA
VR
Reverse Voltage
5
V
PD
Power Dissipation(1)
100
mW
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
λP
Peak Emission Wavelength
IF = 100mA
940
nm
Θ
Emission Angle
IF = 100mA
±12
°
VF
Forward Voltage
IF = 100mA, tp = 20ms
1.6
V
IR
Reverse Current
VR = 5V
100
µA
Ie
Radiant Intensity
IF = 100mA, tp = 20ms
8
mW/sr
tr
Rise Time
IF = 100mA
1
µs
tf
Fall Time
tp = 20ms
1
µs


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