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PCF1252-1 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PCF1252-1 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 1998 Apr 16 4 Philips Semiconductors Product specification Threshold detector and reset generator PCF1252-X family LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal handling precautions appropriate to handling MOS devices (see “Handling MOS Devices”). CHARACTERISTICS VDD = 2.4 to 6.0 V; VSS =0V; Tamb = −40 to +85 °C; (see Fig.3); unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDD supply voltage −0.5 +7.0 V VI input voltage −0.5 VDD + 0.5 V II DC clamp-diode current all pins: VI < −0.5 V or VI >VDD + 0.5 V − 20 mA IO output current − 20 mA Ptot total power dissipation − 150 mW Tstg storage temperature −65 +100 °C Tamb operating ambient temperature −40 +85 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDD supply voltage 2.4 − 6.0 V VTRIP Voltage trip-point: Tamb =25 °C; note 1 PCF1252-0 4.70 4.75 4.80 V PCF1252-1 4.50 4.55 4.60 V PCF1252-2 4.20 4.25 4.30 V PCF1252-3 4.00 4.05 4.10 V PCF1252-4 3.70 3.75 3.80 V PCF1252-5 3.50 3.55 3.60 V PCF1252-6 3.20 3.25 3.30 V PCF1252-7 3.00 3.05 3.10 V PCF1252-8 2.70 2.75 2.80 V PCF1252-9 2.50 2.55 2.60 V IDD supply current Tamb =25 °C; VDD =VTRIP + 0.5 V; COMIN = VDD; see Figs. 4 and 5 − 10 15 µA ∆V TRIP voltage trip-point temperature coefficient note 2 −±100 × 10−6 ±400 × 10−6 mV/K Vhys voltage trip-point hysteresis 15 30 50 mV |
Similar Part No. - PCF1252-1 |
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Similar Description - PCF1252-1 |
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