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ZVN4306AV Datasheet(PDF) 3 Page - Zetex Semiconductors |
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ZVN4306AV Datasheet(HTML) 3 Page - Zetex Semiconductors |
3 / 4 page TYPICAL CHARACTERISTICS Saturation Characteristics VDS - Drain Source Voltage (Volts) 0 1 234 5 6 7 8 9 10 Normalised RDS(on) and VGS(th) v Temperature Tj-Junction Temperature (°C) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Drai n- So urc e R esi sta nc e R DS (o n) Gate Threshold Voltage VGS(TH) ID=3A VGS=10V ID=1mA VGS=VDS 2.6 225 0 4 1 2 7 6 5 3 10 9 8 10V 8V 9V 7V 5V 4V 6V 3.5V VGS= 20V 12V On-resistance v drain current ID-Drain Current (Amps) 0.1 10 100 3.5V 5V VGS=3V 6V 0.1 10 1.0 1 10V 3V 12 11 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage Coss Ciss Crss 0 1020 30 40 5060 70 80 0 300 200 100 400 500 Q-Charge (nC) Gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 VDD= 20V ID=3A 40V 60V 12 3 4 5 6 78 9 10 11 12 Transconductance v drain current ID(on)- Drain Current (Amps) 02 4 68 10 VDS=10V 0 1 2 4 3 5 12 14 16 18 20 8V ZVN4306AV |
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