 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
HMC592 Datasheet(PDF) 6 Page - Hittite Microwave Corporation |
|
||||||||||||||||||||||||||||||
HMC592 Datasheet(HTML) 6 Page - Hittite Microwave Corporation |
|
|
6 / 8 page 
1 1 - 235 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Pad Descriptions Pad Number Function Description Interface Schematic 1RFIN This pad is AC coupled and matched to 50 Ohms. 2, 4, 6 Vgg 1-3 Gate control for amplifier. Adjust to achieve Idd of 750 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.1 μF are required. 3, 5, 7 Vdd 1-3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 8RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. v01.0107 HMC592 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
