 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
HMC592 Datasheet(PDF) 5 Page - Hittite Microwave Corporation |
|
||||||||||||||||||||||||||||||
HMC592 Datasheet(HTML) 5 Page - Hittite Microwave Corporation |
|
|
5 / 8 page 
1 1 - 234 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 Die Packaging Information [1] Standard Alternate GP-1 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. v01.0107 HMC592 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd) +8 Vdc Gate Bias Voltage (Vgg) -2.0 to 0 Vdc RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 62.7 mW/°C above 85 °C) 5.64 W Thermal Resistance (channel to die bottom) 15.94 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Vdd (V) Idd (mA) +6.5 757 +7.0 750 +7.5 745 Typical Supply Current vs. Vdd Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 750 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
