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HMC592 Datasheet(PDF) 5 Page - Hittite Microwave Corporation

Part No. HMC592
Description  GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC592 Datasheet(HTML) 5 Page - Hittite Microwave Corporation

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Die Packaging Information [1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
v01.0107
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10.0 - 13.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8 Vdc
Gate Bias Voltage (Vgg)
-2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +7.0 Vdc)
+15 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 62.7 mW/°C above 85 °C)
5.64 W
Thermal Resistance
(channel to die bottom)
15.94 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Vdd (V)
Idd (mA)
+6.5
757
+7.0
750
+7.5
745
Typical Supply Current vs. Vdd
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS


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