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IRFU3911PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFU3911PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  2 www.irf.com IRFR/U3911PbF Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 9.6 ––– ––– S VDS = 50V, ID = 8.4A Qg Total Gate Charge ––– 21 32 ID = 8.4A Qgs Gate-to-Source Charge ––– 4.3 6.5 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– 6.6 9.9 VGS = 10V td(on) Turn-On Delay Time ––– 7.9 ––– VDD = 500V tr Rise Time ––– 26 ––– ID = 8.4A td(off) Turn-Off Delay Time ––– 52 ––– RG = 22Ω tf Fall Time ––– 25 ––– VGS = 10V Ciss Input Capacitance ––– 740 ––– VGS = 0V Coss Output Capacitance ––– 110 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 18 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 700 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 61 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 130 ––– VGS = 0V, VDS = 0V to 80V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 68 mJ IAR Avalanche Current ––– 8.4 A EAR Repetitive Avalanche Energy ––– 0.0056 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 8.4A, VGS = 0V trr Reverse Recovery Time ––– 86 ––– ns TJ = 25°C, IF = 8.4A Qrr Reverse RecoveryCharge ––– 290 ––– nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 14 56 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.115 Ω VGS = 10V, ID = 8.4A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current |
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