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IRFP15N60LPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFP15N60LPBF
Description  SMPS MOSFET
Download  9 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFP15N60LPBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRFP15N60LPbF
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting T
J = 25°C, L = 2.9mH, RG = 25Ω,
IAS = 15A, dv/dt = 10V/ns. (See Figure 12a)
ƒ I
SD ≤ 15A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C
oss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
600
–––
–––
V
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.39
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
385
460
m
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
50
µA
–––
–––
2.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
0.79
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
8.3
–––
–––
S
Qg
Total Gate Charge
–––
–––
100
Qgs
Gate-to-Source Charge
–––
–––
30
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
46
td(on)
Turn-On Delay Time
–––
20
–––
tr
Rise Time
–––
44
–––
ns
td(off)
Turn-Off Delay Time
–––
28
–––
tf
Fall Time
–––
5.5
–––
Ciss
Input Capacitance
–––
2720
–––
Coss
Output Capacitance
–––
260
–––
Crss
Reverse Transfer Capacitance
–––
20
–––
pF
Coss eff.
Effective Output Capacitance
–––
120
–––
Coss eff. (ER)
Effective Output Capacitance
–––
100
–––
(Energy Related)
Avalanche Characteristics
Symbol
Parameter
Typ.
Units
EAS
Single Pulse Avalanche Energy
d
–––
mJ
IAR
Avalanche Current
Ù
–––
A
EAR
Repetitive Avalanche Energy
™
–––
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Case
–––
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
°C/W
RθJA
Junction-to-Ambient
–––
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 9.0A
f
VGS = 30V
f = 1MHz, open drain
Conditions
VDS = 50V, ID = 9.0A
VGS = -30V
ID = 15A
VDS = 480V
VGS = 10V, See Fig. 7 & 15
f
VDD = 300V
ID = 15A
RG = 1.8Ω
VGS = 10V, See Fig. 11a & 11b
f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
15
28
Max.
320
VGS = 0V,VDS = 0V to 480V
g
40
Max.
0.44
–––


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