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PZTA28 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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PZTA28 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 15 page  3 MPSA28/MMBTA28/PZTA28, Rev A Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage IC = 100 µA, V BE = 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 12 V ICBO Collector Cutoff Current VCB = 60 V, IE = 0 100 nA ICES Collector Cutoff Current VCE = 60 V, VBE = 0 500 nA IEBO Emitter Cutoff Current VEB = 10 V, IC = 0 100 nA ON CHARACTERISTICS hFE DC Current Gain IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V 10,000 10,000 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.01 mA IC = 100 mA, IB = 0.1 mA 1.2 1.5 V VBE(on) Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V 2.0 V SMALL SIGNAL CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0, f = 100 MHz 125 MHz Cobo Output Capacitance VCB = 1.0 V, IE = 0, f = 1.0 MHz 8.0 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NPN Darlington Transistor (continued) Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.001 0.01 0.1 0.2 0 20 40 60 80 100 I - COLLECTOR CURRENT (A) C 25 °C 125 °C - 40 °C V = 5V CE Collector-Emitter Saturation Voltage vs Collect or Current 1 10 100 1000 0 0.4 0.8 1.2 1.6 I - COLLECTOR CURRE NT (mA) C - 40 °C 125 °C ββββ = 1000 25 °C |
Similar Part No. - PZTA28 |
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Similar Description - PZTA28 |
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