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2

IRLR8503PbF

Parameter

Symbol

Min

Typ

Max

Units

Conditions

Diode Forward Voltage*

V

SD

–

1.0

V

I

Reverse Recovery Charge

„

Q

rr

–

76

nC

di/dt = 700A/µs

V

Reverse Recovery Charge

Q

rr(s)

–67

di/dt = 700A/µs

(with Parallel Schottky)

„

(with 10BQ040)

V

Parameter

Symbol

Min

Typ

Max

Units

Conditions

Drain-to-Source

V

(BR)DSS

30

–

–

V

V

Breakdown Voltage*

Static Drain-Source

R

–

11

16

m

Ω

V

on Resistance*

–

13

18

V

Gate Threshold Voltage*

V

1.0

V

V

Drain-Source Leakage Current

I

DSS

–

–

30*

µA

V

–

–

150

V

Tj = 100°C

Gate-Source Leakage Current*

I

GSS

–

–

±100

nA

V

Total Gate Charge Control FET*

Q

g

–15

20

V

Total Gate Charge Sync FET*

Q

g

–13

17

V

Pre-Vth

Q

gs1

–

3.7

–

V

Gate-Source Charge

Post-Vth

Q

gs2

–

1.3

–

nC

Gate-Source Charge

Gate to Drain Charge

Q

gd

–

4.1

–

Switch Charge* (Q

–

5.4

8

Output Charge*

Q

oss

–

23

29.5

V

Gate Resistance

R

g

–

1.7

–

Ω

Turn-on Delay Time

t

d (on)

–10

–

V

Drain Voltage Rise Time

tr

v

–18

–

ns

V

Turn-off Delay Time

t

d (off)

–

11

–

Clamped Inductive Load

Drain Voltage Fall Time

tf

v

–

3

–

See test diagram Fig 14.

Input Capacitance

C

iss

–

1650

–

Output Capacitance

C

oss

–

650

–

pF

V

Reverse Transfer Capacitance

C

rss

–58

–

Electrical Characteristics

Source-Drain Rating & Characteristics

Notes:



Repetitive rating; pulse width limited by max. junction temperature.

‚

Pulse width

≤ 300 µs; duty cycle ≤ 2%.

ƒ

When mounted on 1 inch square copper board, t < 10 sec.

*

Devices are 100% tested to these parameters.

„

Typ = measured - Q

oss

… Calculated continuous current based on maximum allowable

Junction temperature; switching and other losses will

decrease RMS current capability; package limitation

current = 20A.