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IRFR1N60APBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFR1N60APBF
Description  SMPS MOSFET
Download  10 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFR1N60APBF Datasheet(HTML) 2 Page - International Rectifier

 
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IRFR/U1N60APbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
0.88
–––
–––
S
VDS = 50V, ID = 0.84A
Qg
Total Gate Charge
–––
–––
14
ID = 1.4A
Qgs
Gate-to-Source Charge
–––
–––
2.7
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
8.1
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
9.8
–––
VDD = 250V
tr
Rise Time
–––
14
–––
ID = 1.4A
td(off)
Turn-Off Delay Time
–––
18
–––
RG = 2.15Ω
tf
Fall Time
–––
20
–––
RD = 178Ω,See Fig. 10
„
Ciss
Input Capacitance
–––
229
–––
VGS = 0V
Coss
Output Capacitance
–––
32.6
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
2.4
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
320
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
11.5
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
130
–––
VGS = 0V, VDS = 0V to 480V
…
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
600
–––
–––
V
VGS = 0V, ID = 250µA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
7.0
VGS = 10V, ID = 0.84A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 600V, VGS = 0V
–––
–––
250
VDS = 480V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
93
mJ
IAR
Avalanche Current

–––
1.4
A
EAR
Repetitive Avalanche Energy

–––
3.6
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.6
V
TJ = 25°C, IS = 1.4A, VGS = 0V
„
trr
Reverse Recovery Time
–––
290
440
ns
TJ = 25°C, IF = 1.4A
Qrr
Reverse RecoveryCharge
–––
510
760
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
1.4
5.6
A
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.5
RθJA
Junction-to-Ambient (PCB mount)
ˆ
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance


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