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IRFPS35N50LPBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFPS35N50LPBF
Description  SMPS MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFPS35N50LPBF Datasheet(HTML) 1 Page - International Rectifier

   
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IRFPS35N50LPbF
SMPS MOSFET
HEXFET® Power MOSFET
09/14/04
Super-247™
VDSS RDS(on) typ. Trr typ. ID
500V
0.125
170ns
34A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity
.
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
• Lead-Free
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
34
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
22
A
IDM
Pulsed Drain Current
™
140
PD @TC = 25°C Power Dissipation
450
W
Linear Derating Factor
3.6
W/°C
VGS
Gate-to-Source Voltage
±30
V
dv/dt
Peak Diode Recovery dv/dt
e
15
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
1.1(10)
N•m (lbf•in)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
34
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
140
integral reverse
(Body Diode)
Ã
c
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 34A, VGS = 0V
f
trr
Reverse Recovery Time
–––
170
250
ns
TJ = 25°C, IF = 34A
–––
220
330
TJ = 125°C, di/dt = 100A/µs
f
Qrr
Reverse Recovery Charge
–––
670
1010
nC TJ = 25°C, IS = 34A, VGS = 0V
f
–––
1500 2200
TJ = 125°C, di/dt = 100A/µs
f
IRRM
Reverse Recovery Current
–––
8.5
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
PD- 95140


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