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IRFPS35N50LPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFPS35N50LPBF
Description  SMPS MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFPS35N50LPBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRFPS35N50LPbF
2
www.irf.com
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 0.97mH, RG =25Ω,
IAS = 34A (See Figure 13)
Notes:
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while VDS is rising from 0 to 80% VDSS.
ƒ I
SD ≤ 34A, di/dt ≤ 765A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
† Rθ is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
V
∆V
(BR)DSS/
∆T
J
Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.125 0.145
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
50
µA
–––
–––
2.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
1.1
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
gfs
Forward Transconductance
18
–––
–––
S
Qg
Total Gate Charge
–––
–––
230
Qgs
Gate-to-Source Charge
–––
–––
65
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
110
td(on)
Turn-On Delay Time
–––
24
–––
tr
Rise Time
–––
100
–––
ns
td(off)
Turn-Off Delay Time
–––
42
–––
tf
Fall Time
–––42–––
Ciss
Input Capacitance
–––
5580
–––
Coss
Output Capacitance
–––
590
–––
Crss
Reverse Transfer Capacitance
–––
58
–––
pF
Coss
Output Capacitance
–––
7290
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
160
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
320
–––
Coss eff. (ER)
Effective Output Capacitance
–––
220
–––
(Energy Related)
Avalanche Characteristics
Symbol
Parameter
Typ.
Units
EAS
Single Pulse Avalanche Energy
d
–––
mJ
IAR
Avalanche Current
Ù
–––
A
EAR
Repetitive Avalanche Energy
™
–––
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Case
h
–––
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
°C/W
RθJA
Junction-to-Ambient
h
–––
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 20A
f
VGS = 30V
f = 1MHz, open drain
Conditions
VDS = 50V, ID = 20A
VGS = -30V
ID = 34A
VDS = 400V
VGS = 10V, See Fig. 7 & 15
f
VDD = 250V
ID = 34A
RG = 1.2
VGS = 10V, See Fig. 10a & 10b
f
VGS = 0V
VDS = 25V
34
45
Max.
560
VGS = 0V,VDS = 0V to 400V
g
ƒ = 1.0MHz, See Fig. 5
40
Max.
0.28
–––


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