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IRFPS30N60KPBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFPS30N60KPBF
Description  SMPS MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFPS30N60KPBF Datasheet(HTML) 1 Page - International Rectifier

   
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IRFPS30N60KPbF
09/15/04
www.irf.com
1
SMPS MOSFET
HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Lead-Free
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
VDSS
RDS(on) typ.
ID
600V
160m
30A
Absolute Maximum Ratings
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
520
mJ
IAR
Avalanche Current

–––
30
A
EAR
Repetitive Avalanche Energy

–––
45
mJ
Avalanche Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
†
–––
0.28
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
†
–––
40
Thermal Resistance
Super-247™
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
30
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
19
A
IDM
Pulsed Drain Current

120
PD @TC = 25°C
Power Dissipation
450
W
Linear Derating Factor
3.6
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
13
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
(1.6mm from case )
°C
PD- 95906


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