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IRFPS30N60KPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFPS30N60KPBF
Description  SMPS MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFPS30N60KPBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRFPS30N60KPbF
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 30A, VGS = 0V
„
trr
Reverse Recovery Time
–––
640
960
ns
TJ = 25°C, IF = 30A
Qrr
Reverse RecoveryCharge
–––
11
16
µC
di/dt = 100A/µs
„
IRRM
Reverse RecoveryCurrent
–––
31
–––
A
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
16
–––
–––
S
VDS = 50V, ID = 18A
Qg
Total Gate Charge
–––
–––
220
ID = 30A
Qgs
Gate-to-Source Charge
–––
–––
64
nC
VDS = 480V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
110
VGS = 10V
„
td(on)
Turn-On Delay Time
–––
29
–––
VDD = 300V
tr
Rise Time
–––
120
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
56
–––
RG = 3.9 Ω
tf
Fall Time
–––
50
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
5870 –––
VGS = 0V
Coss
Output Capacitance
–––
530
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
54
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
6920 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
140
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
270
–––
VGS = 0V, VDS = 0V to 480V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
S
D
G
Diode Characteristics
30
120
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
600
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.66
–––
V/°C
Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
160
190
m
VGS = 10V, ID = 18A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
–––
–––
50
µA
VDS = 600V, VGS = 0V
–––
–––
250
VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ I
SD ≤ 30A, di/dt ≤ 630A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting T
J = 25°C, L = 1.1mH, RG = 25Ω,
IAS = 30A
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
† Rθ is measured at TJ approximately 90°C


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