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IRFIB7N50APBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFIB7N50APBF
Description  SMPS MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFIB7N50APBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRFIB7N50APbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
6.1
––– –––
S
VDS = 50V, ID = 6.6A
Qg
Total Gate Charge
–––
–––
52
ID = 11A
Qgs
Gate-to-Source Charge
–––
–––
13
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
18
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 250V
tr
Rise Time
–––
35
–––
ID = 11A
td(off)
Turn-Off Delay Time
–––
32
–––
RG = 9.1Ω
tf
Fall Time
–––
28
–––
RD = 22Ω,See Fig. 10
Ciss
Input Capacitance
–––
1423 –––
VGS = 0V
Coss
Output Capacitance
–––
208 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
8.1
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
2000 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
55
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
97
–––
VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
–––
275
mJ
IAR
Avalanche Current
–––
11
A
EAR
Repetitive Avalanche Energy
–––
6.0
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 11A, VGS = 0V
trr
Reverse Recovery Time
–––
510 770
ns
TJ = 25°C, IF = 11A
Qrr
Reverse RecoveryCharge
–––
3.4
5.1
µC
di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
6.6
44
A
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.1
RθJA
Junction-to-Ambient
–––
65
°C/W
Thermal Resistance
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.61 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.52
VGS = 10V, ID = 4.0A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 500V, VGS = 0V
–––
––– 250
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current


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