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IRF7478PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7478PBF
Description  SMPS MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF7478PBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRF7478PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
17
–––
–––
S
VDS = 50V, ID = 4.2A
Qg
Total Gate Charge
–––
21
31
ID = 4.2A
Qgs
Gate-to-Source Charge
–––
4.3
–––
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
9.6
–––
VGS = 4.5V
td(on)
Turn-On Delay Time
–––
7.7
–––
VDD = 30V
tr
Rise Time
–––
2.6
–––
ID = 4.2A
td(off)
Turn-Off Delay Time
–––
44
–––
RG = 6.2Ω
tf
Fall Time
–––
13
–––
VGS = 10V
ƒ
Ciss
Input Capacitance
–––
1740 –––
VGS = 0V
Coss
Output Capacitance
–––
300
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
37
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
1590 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
220
–––
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
410
–––
VGS = 0V, VDS = 0V to 48V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 4.2A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
52
78
ns
TJ = 25°C, IF = 4.2A
Qrr
Reverse RecoveryCharge
–––
100
150
nC
di/dt = 100A/µs
ƒ
Diode Characteristics
2.3
56
A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.065 –––
V/°C
Reference to 25°C, ID = 1mA
–––
20
26
VGS = 10V, ID = 4.2A
ƒ
–––
23
30
VGS = 4.5V, ID = 3.5A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 48V, VGS = 0V
–––
–––
100
VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
140
mJ
IAR
Avalanche Current

–––
4.2
A


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