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IRF7469PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7469PBF
Description  SMPS MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF7469PBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRF7469PbF
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
17
–––
–––
S
VDS = 20V, ID = 7.2A
Qg
Total Gate Charge
–––
15
23
ID = 7.2A
Qgs
Gate-to-Source Charge
–––
7.0
11
nC
VDS = 20V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.0
8.0
VGS = 4.5V
ƒ
Qoss
Output Gate Charge
–––
16
24
VGS = 0V, VDS = 16V
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 20V
tr
Rise Time
–––
2.2
–––
ID = 7.2A
td(off)
Turn-Off Delay Time
–––
14
–––
RG = 1.8Ω
tf
Fall Time
–––
3.5
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
–––
2000 –––
VGS = 0V
Coss
Output Capacitance
–––
480
–––
VDS = 20V
Crss
Reverse Transfer Capacitance
–––
28
–––
pF
ƒ = 1.0MHz
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.80
1.3
V
TJ = 25°C, IS = 7.2A, VGS = 0V
ƒ
–––
0.65
–––
TJ = 125°C, IS = 7.2A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
47
71
ns
TJ = 25°C, IF = 7.2A, VR=15V
Qrr
Reverse Recovery Charge
–––
91
140
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
77
120
ns
TJ = 125°C, IF = 7.2A, VR=20V
Qrr
Reverse Recovery Charge
–––
150
230
nC
di/dt = 100A/µs
ƒ
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
210
mJ
IAR
Avalanche Current

–––
7.2
A
Avalanche Characteristics
S
D
G
Diode Characteristics
2.3
73
A
VSD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.04
–––
V/°C
Reference to 25°C, ID = 1mA
–––
12
17
VGS = 10V, ID = 9.0A
ƒ
–––
15.5
21
VGS = 4.5V, ID = 7.2A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 32V, VGS = 0V
–––
–––
100
VDS = 32V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m


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