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IRF7456PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7456PBF
Description  SMPS MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF7456PBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRF7456PbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 2.5A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
48
72
ns
TJ = 25°C, IF = 2.5A
Qrr
Reverse RecoveryCharge
–––
74
110
nC
di/dt = 100A/µs
ƒ
Diode Characteristics
2.5
130
A
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
250
mJ
IAR
Avalanche Current

–––
16
A
EAR
Repetitive Avalanche Energy

–––
0.25
mJ
Avalanche Characteristics
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
44
–––
–––
S
VDS = 10V, ID = 16A
Qg
Total Gate Charge
–––
41
62
ID = 16A
Qgs
Gate-to-Source Charge
–––
9.7
15
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
–––
18
27
VGS = 5.0V,
ƒ
td(on)
Turn-On Delay Time
–––
20
–––
VDD = 10V
tr
Rise Time
–––
25
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
50
–––
RG = 6.0Ω
tf
Fall Time
–––
52
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
––– 3640 –––
VGS = 0V
Coss
Output Capacitance
––– 1570 –––
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
330
–––
pF
ƒ = 1.0MHz
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.024 –––
V/°C Reference to 25°C, ID = 1mA
––– 0.00470.0065
VGS = 10V, ID = 16A
ƒ
––– 0.00570.0075
VGS = 4.5V, ID = 13A
ƒ
––– 0.011 0.020
VGS = 2.8V, ID = 3.5A
ƒ
VGS(th)
Gate Threshold Voltage
0.6
–––
2.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 12V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -12V


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