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AP10N70R Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP10N70R Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
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2 / 4 page  Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1.0mA 650 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.0A - - 0.6 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5A 5 - - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 oC) VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 3 ID=10A - 35.9 57 nC Qgs Gate-Source Charge VDS=480V - 8.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 11.5 - nC td(on) Turn-on Delay Time 3 VDD=300V - 14.9 - ns tr Rise Time ID=10A - 19.7 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 51.7 - ns tf Fall Time RD=30Ω - 23.3 - ns Ciss Input Capacitance VGS=0V - 1950 3120 pF Coss Output Capacitance VDS=15V - 630 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF Rg Gate Resistance f=1.0MHz - 2 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 3 Tj=25℃, IS=10A, VGS=0V - - 1.5 V trr Reverse Recovery Time 2 IS=10A, VGS=0V, - 640 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7460 - nC Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25 oC , V DD=50V , L=1.0mH , RG=25Ω , IAS=10A. 3.Pulse width <300us , duty cycle <2%. 2/4 AP10N70R/P-A ±100 ± 30V |
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Similar Description - AP10N70R |
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