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PBYR645CT Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PBYR645CT
Description  Rectifier diodes Schottky barrier
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR645CT Datasheet(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR645CT series
Schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV)) per
diode; square current waveform where
I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation P
F = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS) / IF(AV).
Fig.3. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current per diode;
I
R = f(VR); parameter Tj
Fig.5. Typical junction capacitance per diode;
C
d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb = f(tp).
0123456
78
0
1
2
3
4
5
6
D = 1.0
0.5
0.2
0.1
PBYR645CT
Rs = 0.033 Ohms
Vo = 0.438 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
D =
tp
tp
T
T
t
I
145
140
135
130
125
120
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR645CT
50 C
75 C
100 C
Tj = 25 C
125 C
012345
0
1
2
3
4
5
a = 1.57
1.9
2.2
2.8
4
PBYR645CT
Rs = 0.033 Ohms
Vo = 0.438 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
150
145
140
135
130
125
Tmb(max) / C
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR645CT
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
BYV118
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
PBYR645CT
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
tp
tp
T
T
P
t
D
May 1998
3
Rev 1.200


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