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PBYR3040 Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBYR3040 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 5 page Philips Semiconductors Product specification Rectifier diodes PBYR3045WT series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 40 V/ 45 V • Fast switching • Reverse surge capability I O(AV) = 30 A • High thermal cycling performance • Low thermal resistance I FSM = 300 A V F ≤ 0.6 V GENERAL DESCRIPTION PINNING SOT429 (TO247) Dual, common cathode schottky PIN DESCRIPTION rectifier diodes in a plastic envelope. Intended for use as 1 anode 1 (a) output rectifiers in low voltage, high frequency switched mode power 2 cathode (k) supplies. 3 anode 2 (a) The PBYR3045WT series is supplied in the conventional leaded tab cathode SOT429 (TO247) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR30 40WT 45WT V RRM Peak repetitive reverse - 40 45 V voltage V RWM Working peak reverse - 40 45 V voltage V R Continuous reverse voltage T mb ≤ 107 ˚C - 40 45 V I O(AV) Average rectified output square wave; δ = 0.5; T mb ≤ 124 ˚C - 30 A current (both diodes conducting) I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 124 ˚C - 30 A current per diode I FSM Non-repetitive peak forward t = 10 ms - 300 A current per diode t = 8.3 ms - 330 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 2 A surge current per diode limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction per diode - - 1.6 K/W to mounting base both diodes - - 1.2 K/W R th j-a Thermal resistance junction in free air - 45 - K/W to ambient k a1 a2 13 2 2 3 1 July 1998 1 Rev 1.200 |
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