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PBYR225CT Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PBYR225CT
Description  Rectifier diodes Schottky barrier
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR225CT Datasheet(HTML) 3 Page - NXP Semiconductors

  PBYR225CT Datasheet HTML 1Page - NXP Semiconductors PBYR225CT Datasheet HTML 2Page - NXP Semiconductors PBYR225CT Datasheet HTML 3Page - NXP Semiconductors PBYR225CT Datasheet HTML 4Page - NXP Semiconductors PBYR225CT Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR225CT series
Schottky barrier
Fig.2. Maximum forward dissipation P
F = f(IF(AV)) per
diode; square current waveform where
I
F(AV) =IF(RMS) x √D.
Fig.3. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current per diode;
I
R = f(VR); parameter Tj
Fig.5. Typical junction capacitance per diode;
C
d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-sp = f(tp).
0
0.5
1
1.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
D = 1.0
0.5
0.2
0.1
PBYR225CT
Rs = 0.038 Ohms
Vo = 0.35 V
IF(AV) / A
PF / W
Tsp(max) / C
150
148.3
146.6
143.2
139.8
144.9
141.5
138.1
T
I
D =
tp
tp
T
t
1
10
100
10
100
1000
BYV116
VR / V
Cd / pF
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.5
1
1.5
2
PBYR225CT
VF / V
IF / A
Tj = 25 C
Tj = 125 C
typ
max
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.01
0.1
1
10
100
PBYR225CT
pulse width, tp (s)
Transient thermal impedance, Zth j-sp (K/W)
D =
tp
tp
T
T
P
t
D
0
5
10
15
20
25
1uA
10uA
100uA
1mA
10mA
100mA
BYV116
VR / V
IR / A
Tj = 25 C
50 C
75 C
100 C
125 C
150 C
March 1998
3
Rev 1.100


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