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HGT1S7N60A4DS Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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HGT1S7N60A4DS Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 9 page  ©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE Typical Performance Curves Unless Otherwise Specified (Continued) 100 60 80 ICE, COLLECTOR TO EMITTER CURRENT (A) 180 140 160 120 VGE = 15V, TJ = 125 oC RG = 25Ω, L = 1mH, VCE = 390V 4 26 8 10 12 14 0 VGE = 12V, TJ = 125 oC VGE = 15V, TJ = 25 oC VGE = 12V, TJ = 25 oC ICE, COLLECTOR TO EMITTER CURRENT (A) 20 40 30 60 80 50 70 RG = 25Ω, L = 1mH, VCE = 390V 90 TJ = 125 oC, V GE = 12V OR 15V TJ = 25 oC, V GE = 12V OR 15V 4 26 8 10 12 14 0 0 40 60 8 9 11 12 15 VGE, GATE TO EMITTER VOLTAGE (V) 14 80 100 120 7 PULSE DURATION = 250 µs DUTY CYCLE < 0.5%, VCE = 10V TJ = 125 oC TJ = -55 oC TJ = 25 oC 20 13 10 QG, GATE CHARGE (nC) 0 3 IG(REF) = 1mA, RL = 43Ω, TJ = 25 oC VCE = 200V VCE = 400V 6 9 12 15 510 15 20 30 25 35 40 0 VCE = 600V ICE = 3.5A 0 200 50 75 100 TC, CASE TEMPERATURE ( oC) 400 125 25 150 800 ETOTAL = EON2 + EOFF RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V 600 ICE = 14A ICE = 7A 0.1 100 RG, GATE RESISTANCE (Ω) 1 10 1000 10 TJ = 125 oC, L = 1mH, V CE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 3.5A ICE = 7A ICE = 14A HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS |
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