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PBYR1545CTF Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. PBYR1545CTF
Description  Rectifier diodes Schottky barrier
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR1545CTF Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR1545CTF, PBYR1545CTX series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance
I
O(AV) = 15 A
• Isolated mounting tab
V
F ≤ 0.57V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR1545CTF series is supplied in the SOT186 package.
The PBYR1545CTX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR15
40CTF
45CTF
PBYR15
40CTX
45CTX
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
hs ≤ 89 ˚C
-
40
45
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5;
-
15
A
current (both diodes
T
hs ≤ 93 ˚C
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5;
-
15
A
current per diode
T
hs ≤ 93 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
k
a1
a2
13
2
12 3
case
12 3
case
October 1998
1
Rev 1.300


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