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PBYR1045CTD Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PBYR1045CTD
Description  Rectifier diodes Schottky barrier
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR1045CTD Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR1045CTD series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance
I
O(AV) = 10 A
• Low thermal resistance
V
F ≤ 0.6 V
GENERAL DESCRIPTION
PINNING
SOT428
Dual
schottky
rectifier
diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in low voltage, high frequency
1
anode 1
switched mode power supplies.
2
cathode
1
The
PBYR1045CTD
series
is
supplied in the SOT428 surface
3
anode 2
mounting package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
40CTD
45CTD
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 108 ˚C
-
40
45
V
I
O(AV)
Average rectified forward
square wave;
δ = 0.5;
-
10
A
current (both diodes
T
mb ≤ 127 ˚C
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5;
-
10
A
current per diode
T
mb ≤ 127 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current per diode
t = 8.3 ms
-
110
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
k
a1
a2
13
2
1
2
3
tab
1 it is not possible to make connection to pin 2 of the SOT428 package
July 1998
1
Rev 1.200


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