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PBYR1025CTD Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. PBYR1025CTD
Description  Rectifier diodes Schottky barrier
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR1025CTD Datasheet(HTML) 2 Page - NXP Semiconductors

  PBYR1025CTD Datasheet HTML 1Page - NXP Semiconductors PBYR1025CTD Datasheet HTML 2Page - NXP Semiconductors PBYR1025CTD Datasheet HTML 3Page - NXP Semiconductors PBYR1025CTD Datasheet HTML 4Page - NXP Semiconductors PBYR1025CTD Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
PBYR1025CTD series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
-
3
K/W
to mounting base
both diodes
-
-
2.5
K/W
R
th j-a
Thermal resistance junction
pcb mounted, minimum footprint, FR4
-
50
-
K/W
to ambient
board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F = 5 A; Tj = 125˚C
-
0.33
0.4
V
I
F = 10 A; Tj = 125˚C
-
0.44
0.55
V
I
F = 10 A
-
0.5
0.62
V
I
R
Reverse current
V
R = VRWM
-
0.2
5
mA
V
R = VRWM; Tj = 100˚C
-
10
20
mA
C
d
Junction capacitance
V
R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
-
350
-
pF
February 1998
2
Rev 1.000


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