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FQH90N15 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQH90N15 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQH90N15 / FQA90N15 Rev. C October 2006 QFET ® FQH90N15 / FQA90N15 N-Channel Power MOSFET Features • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V • Low gate charge (typical 220 nC) •Low Crss (typical 200 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability •175 °C maximum junction temperature rating Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. S D G G S D TO-247 FQH Series GS D TO-3P FQA Series Absolute Maximum Ratings Symbol Parameter FQH90N15/FQA90N15 Unit VDSS Drain-Source Voltage 150 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 90 63.5 A A IDM Drain Current - Pulsed (Note 1) 360 A VGSS Gate-Source voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 1400 mJ IAR Avalanche Current (Note 1) 90 A EAR Repetitive Avalanche Energy (Note 1) 37.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 375 2.5 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 0.4 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W |
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