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FOD617 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FOD617 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page 3 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5 Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Transfer Characteristics (TA = 25°C Unless otherwise specified.) *Typical values at TA = 25°C Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit EMITTER VF Forward Voltage FOD814 IF = ±20mA – 1.2 1.4 V FOD617 IF = 60mA – 1.35 1.65 FOD817 IF = 20mA – 1.2 1.4 IR Reverse Leakage Current FOD617 VR = 6.0V – 0.001 10 µA FOD817 VR = 4.0V – – 10 Ct Terminal Capacitance FOD814 V = 0, f = 1kHz – 50 250 pF FOD617 V = 0, f = 1kHz – 30 250 FOD817 V = 0, f = 1kHz – 30 250 DETECTOR ICEO Collector Dark Current FOD814 VCE = 20V, IF = 0 – – 100 nA FOD617C/D VCE = 10V, IF = 0 – 1 100 FOD617A/B VCE = 10V, IF = 0 – 1 50 FOD817 VCE = 20V, IF = 0 – – 100 BVCEO Collector-Emitter Breakdown Voltage FOD814 IC = 0.1mA, IF = 0 70 – – V FOD617 IC = 100µA, IF = 0 70 – – FOD817 IC = 0.1mA, IF = 0 70 – – BVECO Emitter-Collector Breakdown Voltage FOD814 IE = 10µA, IF = 0 6 – – V FOD617 IE = 10µA, IF = 0 7 – – FOD817 IE = 10µA, IF = 0 6 – – Symbol DC Characteristic Device Test Conditions Min. Typ.* Max. Unit CTR Current Transfer Ratio FOD814 IF = ±1mA, VCE = 5V (1) 20 – 300 % FOD814A 50 – 150 FOD617A IF = 10mA, VCE = 5V (1) 40 – 80 FOD617B 63 – 125 FOD617C 100 – 200 FOD617D 160 – 320 FOD617A IF = 1mA, VCE = 5V (1) 13 – – FOD617B 22 – – FOD617C 34 – – FOD617D 56 – – FOD817 IF = 5mA, VCE = 5V (1) 50 – 600 FOD817A 80 – 160 FOD817B 130 – 260 FOD817C 200 – 400 FOD817D 300 – 600 VCE (sat) Collector-Emitter Saturation Voltage FOD814 IF = ±20mA, IC = 1mA – 0.1 0.2 V FOD617 IF = 10mA, IC = 2.5mA – – 0.4 FOD817 IF = 20mA, IC = 1mA – 0.1 0.2 |
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