©2006 Fairchild Semiconductor Corporation

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www.fairchildsemi.com

FMMT549 Rev. C

tm

August 2006

FMMT549

PNP Low Saturation Transistor

Features

• ThIs device is designed with high current gain and low saturation voltage

with collector currents up to 2A continous.

• Sourced from process PB.

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics *

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

-30

V

Collector-Base Voltage

-35

V

Emitter-Base Voltage

-5

V

Collector Current - Continuous

- Peak Pulse Current

-1

-2

A

A

Junction Temperature

150

°C

Storage Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Value

Unit

Derate above 25

°C

500

4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

250

°C/W

1. Base 2. Emitter 3. Collector

SOT-23

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