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FFB2222A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FFB2222A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector Cutoff Current VCB = 60 V, IE = 0 10 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 10 nA hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* 35 50 75 100 50 40 300 VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.3 1.0 V V VBE(sat) Base-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1.2 2.0 V V NPN Multi-Chip General Purpose Amplifier (continued) Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 20 pF NF Noise Figure IC = 100 µA, VCE = 10 V, RS = 1.0 k Ω, f = 1.0 kHz 2.0 dB SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% td Delay Time VCC = 30 V, VBE(OFF) = 0.5 V, 8 ns tr Rise Time IC = 150 mA, IB1 = 15 mA 20 ns ts Storage Time VCC = 30 V, IC = 150 mA, 180 ns tf Fall Time IB1 = IB2 = 15 mA 40 ns |
Similar Part No. - FFB2222A |
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Similar Description - FFB2222A |
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