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FDS7066N7 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDS7066N7 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page FDS7066N7 Rev D3 (W) Typical Characteristics 0 2 4 6 8 10 0 1020 30405060708090 Qg, GATE CHARGE (nC) ID = 23A VDS = 5V 10V 15V 0 800 1600 2400 3200 4000 4800 5600 6400 0 6 12 18 24 30 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 85 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.01 0.1 1 10 100 t1, TIME (sec) SINGLE PULSE RθJA = 85°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 85 oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
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