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PBSS2515 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PBSS2515 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 2001 Nov 07 3 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor PBSS2515VS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor unless otherwise specified VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 500 mA ICM peak collector current − 1A IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature 65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient notes 1 and 2 416 K/W |
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