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PBSS2515 Datasheet(PDF) 6 Page - NXP Semiconductors |
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PBSS2515 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 2001 Nov 07 6 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor PBSS2515VS handbook, halfpage 102 10 1 10−1 MLD648 10−1 110 IC (mA) RCEsat ( Ω) 102 103 (2) (1) (3) Fig.6 Equivalent on-resistance as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage 0 (1) (2) (3) (4) (6) (8) IC (mA) VCE (V) 1200 800 400 0 210 46 8 MLD644 (9) (10) (7) (5) Fig.7 Collector current as a function of collector-emitter voltage; typical values. (1) IB = 4.6 mA. (2) IB = 4.14 mA. (3) IB = 3.68 mA. (4) IB = 3.22 mA. (5) IB = 2.76 mA. (6) IB = 2.3 mA. (7) IB = 1.84 mA. (8) IB = 1.38 mA. (9) IB = 0.92 mA. (10) IB = 0.46 mA. Tamb =25 °C. |
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